STS3414 symbol v ds v gs i dm 100 w a p d c 1.25 -55 to 150 i d units parameter 30 4 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v 4a 60 @ vgs=4.5v 50 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. sot-23 package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja a t a =25 c 15 a g d s s ot-23 s g d 75 @ vgs=2.5v product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) 0.5 v g fs 13 s v sd c iss 440 pf c oss 62 pf c rss 37 pf q g 4 nc 8 nc q gs 43 nc q gd t d(on) 9.3 ns t r 1 ns t d(off) 1.4 ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =5v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5.0v , i d =4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =3a 45 60 m ohm c f=1.0mhz c v ds =15v,i d =4a, v gs =4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =1.25a 0.82 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ _ 0.9 1.2 i s maximum continuous drain-source diode forward current 1.25 a 5 v ds =15v,i d =4a,v gs =10v v ds =15v,i d =4a,v gs =4.5v 4.6 nc v gs =10v , i d =4a 37 50 m ohm b v gs =2.5v , i d =1a m ohm 50 75 STS3414 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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